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Atomic-scale redistribution of dopants in polycrystalline silicon layers.

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Bibliographic Details
Title: Atomic-scale redistribution of dopants in polycrystalline silicon layers.
Authors: Duguay, S., Colin, A., Mathiot, D.
Source: Journal of Applied Physics; Aug2010, Vol. 107 Issue 8, p034911-1-034911-7, 7p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501648166
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Atomic-scale redistribution of dopants in polycrystalline silicon layers.
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  Data: <searchLink fieldCode="AU" term="%22Duguay%2C+S%2E%22">Duguay, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Colin%2C+A%2E%22">Colin, A.</searchLink><br /><searchLink fieldCode="AU" term="%22Mathiot%2C+D%2E%22">Mathiot, D.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; Aug2010, Vol. 107 Issue 8, p034911-1-034911-7, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501648166
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.3466783
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 034911-1
    Titles:
      – TitleFull: Atomic-scale redistribution of dopants in polycrystalline silicon layers.
        Type: main
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            NameFull: Duguay, S.
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            NameFull: Colin, A.
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            NameFull: Mathiot, D.
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            – D: 01
              M: 08
              Text: Aug2010
              Type: published
              Y: 2010
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              Value: 107
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            – TitleFull: Journal of Applied Physics
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