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Performance Degradation of Pentacene-Based Organic Thin-Film Transistors Under Positive Drain Bias Stress in the Atmosphere.

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Bibliographic Details
Title: Performance Degradation of Pentacene-Based Organic Thin-Film Transistors Under Positive Drain Bias Stress in the Atmosphere.
Authors: Fan, Ching-Lin, Yang, Tsung-Hsien, Chiang, Chin-Yuan
Source: IEEE Electron Device Letters; August 2010, Vol. 31 Issue 8, p887-889, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501653178
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Performance Degradation of Pentacene-Based Organic Thin-Film Transistors Under Positive Drain Bias Stress in the Atmosphere.
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  Data: <searchLink fieldCode="AU" term="%22Fan%2C+Ching-Lin%22">Fan, Ching-Lin</searchLink><br /><searchLink fieldCode="AU" term="%22Yang%2C+Tsung-Hsien%22">Yang, Tsung-Hsien</searchLink><br /><searchLink fieldCode="AU" term="%22Chiang%2C+Chin-Yuan%22">Chiang, Chin-Yuan</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; August 2010, Vol. 31 Issue 8, p887-889, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501653178
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2010.2051212
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 3
        StartPage: 887
    Titles:
      – TitleFull: Performance Degradation of Pentacene-Based Organic Thin-Film Transistors Under Positive Drain Bias Stress in the Atmosphere.
        Type: main
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          Name:
            NameFull: Fan, Ching-Lin
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            NameFull: Yang, Tsung-Hsien
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            NameFull: Chiang, Chin-Yuan
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            – D: 01
              M: 08
              Text: August 2010
              Type: published
              Y: 2010
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              Value: 07413106
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              Value: 31
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              Value: 8
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            – TitleFull: IEEE Electron Device Letters
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