Effect of Au contamination on the electrical characteristics of a “model” small-angle grain boundary in n-type direct silicon bonded wafer.

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Bibliographic Details
Title: Effect of Au contamination on the electrical characteristics of a “model” small-angle grain boundary in n-type direct silicon bonded wafer.
Authors: Yu, X., Li, X., Fan, R.
Source: Journal of Applied Physics; Oct2010, Vol. 108 Issue 4, p053719-1-053719-6, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501664953
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Effect of Au contamination on the electrical characteristics of a “model” small-angle grain boundary in n-type direct silicon bonded wafer.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; Oct2010, Vol. 108 Issue 4, p053719-1-053719-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501664953
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.3471817
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 053719-1
    Titles:
      – TitleFull: Effect of Au contamination on the electrical characteristics of a “model” small-angle grain boundary in n-type direct silicon bonded wafer.
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            NameFull: Yu, X.
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            NameFull: Li, X.
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            NameFull: Fan, R.
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              Text: Oct2010
              Type: published
              Y: 2010
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              Value: 108
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