APA (7th ed.) Citation

Mathiot, D., & Pfister, J. C. (1989). Dopant redistribution in heavily doped silicon: Confirmation of the validity of the vacancy-percolation model. Journal of Applied Physics, 66, 970. https://doi.org/10.1063/1.343476

Chicago Style (17th ed.) Citation

Mathiot, D., and J. C. Pfister. "Dopant Redistribution in Heavily Doped Silicon: Confirmation of the Validity of the Vacancy-percolation Model." Journal of Applied Physics 66 (1989): 970. https://doi.org/10.1063/1.343476.

MLA (9th ed.) Citation

Mathiot, D., and J. C. Pfister. "Dopant Redistribution in Heavily Doped Silicon: Confirmation of the Validity of the Vacancy-percolation Model." Journal of Applied Physics, vol. 66, 1989, p. 970, https://doi.org/10.1063/1.343476.