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Dopant redistribution in heavily doped silicon: confirmation of the validity of the vacancy-percolation model.

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Bibliographic Details
Title: Dopant redistribution in heavily doped silicon: confirmation of the validity of the vacancy-percolation model.
Authors: Mathiot, D., Pfister, J. C.
Source: Journal of Applied Physics; July 15 1989, Vol. 66, p970-972, 3p
Database: Applied Science & Technology Source
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