Analysis and modeling of the pads for RF CMOS based on EM simulation.
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| Title: | Analysis and modeling of the pads for RF CMOS based on EM simulation. |
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| Authors: | Cheng, J., Li, S., Han, B. |
| Source: | Microwave Journal; October 2010, Vol. 53 Issue 10, p96-108, 7p |
| Database: | Applied Science & Technology Source |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 501679485 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Analysis and modeling of the pads for RF CMOS based on EM simulation. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Cheng%2C+J%2E%22">Cheng, J.</searchLink><br /><searchLink fieldCode="AU" term="%22Li%2C+S%2E%22">Li, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Han%2C+B%2E%22">Han, B.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Microwave+Journal%22">Microwave Journal</searchLink>; October 2010, Vol. 53 Issue 10, p96-108, 7p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501679485 |
| RecordInfo | BibRecord: BibEntity: Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 96 Titles: – TitleFull: Analysis and modeling of the pads for RF CMOS based on EM simulation. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Cheng, J. – PersonEntity: Name: NameFull: Li, S. – PersonEntity: Name: NameFull: Han, B. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 10 Text: October 2010 Type: published Y: 2010 Identifiers: – Type: issn-print Value: 01926225 Numbering: – Type: volume Value: 53 – Type: issue Value: 10 Titles: – TitleFull: Microwave Journal Type: main |
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