APA (7th ed.) Citation

Zhang, G., Ra, C. H., & Li, H. (2010). Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory Application. IEEE Transactions on Electron Devices, 57(11), 2794. https://doi.org/10.1109/TED.2010.2066200

Chicago Style (17th ed.) Citation

Zhang, Gang, Chang Ho Ra, and Hua-Min Li. "Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory Application." IEEE Transactions on Electron Devices 57, no. 11 (2010): 2794. https://doi.org/10.1109/TED.2010.2066200.

MLA (9th ed.) Citation

Zhang, Gang, et al. "Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory Application." IEEE Transactions on Electron Devices, vol. 57, no. 11, 2010, p. 2794, https://doi.org/10.1109/TED.2010.2066200.