Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory Application.
Saved in:
| Title: | Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory Application. |
|---|---|
| Authors: | Zhang, Gang, Ra, Chang Ho, Li, Hua-Min |
| Source: | IEEE Transactions on Electron Devices; November 2010, Vol. 57 Issue 11, p2794-2800, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00189383 |
|---|---|
| DOI: | 10.1109/TED.2010.2066200 |
