APA (7th ed.) Citation

Philippe, T., Duguay, S., & Mathiot, D. (2011). Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation. Journal of Applied Physics, 109(2), 023501-1. https://doi.org/10.1063/1.3533416

Chicago Style (17th ed.) Citation

Philippe, T., S. Duguay, and D. Mathiot. "Atomic Scale Evidence of the Suppression of Boron Clustering in Implanted Silicon by Carbon Coimplantation." Journal of Applied Physics 109, no. 2 (2011): 023501-1. https://doi.org/10.1063/1.3533416.

MLA (9th ed.) Citation

Philippe, T., et al. "Atomic Scale Evidence of the Suppression of Boron Clustering in Implanted Silicon by Carbon Coimplantation." Journal of Applied Physics, vol. 109, no. 2, 2011, pp. 023501-1, https://doi.org/10.1063/1.3533416.