APA (7th ed.) Citation

Solmi, S., Landi, E., & Baruffaldi, F. (1990). High-concentration boron diffusion in silicon: Simulation of the precipitation phenomena. Journal of Applied Physics, 68, 3250. https://doi.org/10.1063/1.346376

Chicago Style (17th ed.) Citation

Solmi, S., E. Landi, and F. Baruffaldi. "High-concentration Boron Diffusion in Silicon: Simulation of the Precipitation Phenomena." Journal of Applied Physics 68 (1990): 3250. https://doi.org/10.1063/1.346376.

MLA (9th ed.) Citation

Solmi, S., et al. "High-concentration Boron Diffusion in Silicon: Simulation of the Precipitation Phenomena." Journal of Applied Physics, vol. 68, 1990, p. 3250, https://doi.org/10.1063/1.346376.