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High-concentration boron diffusion in silicon: simulation of the precipitation phenomena.

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Bibliographic Details
Title: High-concentration boron diffusion in silicon: simulation of the precipitation phenomena.
Authors: Solmi, S., Landi, E., Baruffaldi, F.
Source: Journal of Applied Physics; October 1 1990, Vol. 68, p3250-3258, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501794122
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: High-concentration boron diffusion in silicon: simulation of the precipitation phenomena.
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  Data: <searchLink fieldCode="AU" term="%22Solmi%2C+S%2E%22">Solmi, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Landi%2C+E%2E%22">Landi, E.</searchLink><br /><searchLink fieldCode="AU" term="%22Baruffaldi%2C+F%2E%22">Baruffaldi, F.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; October 1 1990, Vol. 68, p3250-3258, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501794122
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.346376
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 3250
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      – TitleFull: High-concentration boron diffusion in silicon: simulation of the precipitation phenomena.
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          Name:
            NameFull: Solmi, S.
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            NameFull: Landi, E.
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            NameFull: Baruffaldi, F.
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            – D: 01
              M: 10
              Text: October 1 1990
              Type: published
              Y: 1990
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              Value: 68
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            – TitleFull: Journal of Applied Physics
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