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A p-n-p AlGaAs heterojunction bipolar transistor for high-temperature operation.

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Bibliographic Details
Title: A p-n-p AlGaAs heterojunction bipolar transistor for high-temperature operation.
Authors: Frost, M. S., Riches, M., Kerr, T.
Source: Journal of Applied Physics; September 15 1986, Vol. 60, p2149-2153, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501797456
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: A p-n-p AlGaAs heterojunction bipolar transistor for high-temperature operation.
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  Data: <searchLink fieldCode="AU" term="%22Frost%2C+M%2E+S%2E%22">Frost, M. S.</searchLink><br /><searchLink fieldCode="AU" term="%22Riches%2C+M%2E%22">Riches, M.</searchLink><br /><searchLink fieldCode="AU" term="%22Kerr%2C+T%2E%22">Kerr, T.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; September 15 1986, Vol. 60, p2149-2153, 5p
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        Value: 10.1063/1.337168
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 2149
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      – TitleFull: A p-n-p AlGaAs heterojunction bipolar transistor for high-temperature operation.
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            NameFull: Frost, M. S.
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            NameFull: Riches, M.
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            NameFull: Kerr, T.
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            – D: 15
              M: 09
              Text: September 15 1986
              Type: published
              Y: 1986
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              Value: 60
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