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Carrier surface generation and recombination effects in photoconduction of HgI2 single crystals.

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Bibliographic Details
Title: Carrier surface generation and recombination effects in photoconduction of HgI2 single crystals.
Authors: Burshtein, Z., Akujieze, Justin K., Siberman, E.
Source: Journal of Applied Physics; November 1 1986, Vol. 60, p3182-3187, 6p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501812909
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Carrier surface generation and recombination effects in photoconduction of HgI2 single crystals.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; November 1 1986, Vol. 60, p3182-3187, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501812909
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.337733
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 3182
    Titles:
      – TitleFull: Carrier surface generation and recombination effects in photoconduction of HgI2 single crystals.
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          Name:
            NameFull: Burshtein, Z.
      – PersonEntity:
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            NameFull: Akujieze, Justin K.
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            NameFull: Siberman, E.
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            – D: 01
              M: 11
              Text: November 1 1986
              Type: published
              Y: 1986
          Identifiers:
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              Value: 00218979
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              Value: 60
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            – TitleFull: Journal of Applied Physics
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