APA (7th ed.) Citation

Mathiot, D., Regolini, J. L., & Dutartre, D. (1991). Electrical characterization of silicon epitaxial layers grown by limited reaction processing. Journal of Applied Physics, 69, 358. https://doi.org/10.1063/1.347721

Chicago Style (17th ed.) Citation

Mathiot, D., J. L. Regolini, and D. Dutartre. "Electrical Characterization of Silicon Epitaxial Layers Grown by Limited Reaction Processing." Journal of Applied Physics 69 (1991): 358. https://doi.org/10.1063/1.347721.

MLA (9th ed.) Citation

Mathiot, D., et al. "Electrical Characterization of Silicon Epitaxial Layers Grown by Limited Reaction Processing." Journal of Applied Physics, vol. 69, 1991, p. 358, https://doi.org/10.1063/1.347721.