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Electrical characterization of silicon epitaxial layers grown by limited reaction processing.

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Bibliographic Details
Title: Electrical characterization of silicon epitaxial layers grown by limited reaction processing.
Authors: Mathiot, D., Regolini, J. L., Dutartre, D.
Source: Journal of Applied Physics; January 1 1991, Vol. 69, p358-361, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501823519
AccessLevel: 2
PubType: Academic Journal
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  Data: Electrical characterization of silicon epitaxial layers grown by limited reaction processing.
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  Data: <searchLink fieldCode="AU" term="%22Mathiot%2C+D%2E%22">Mathiot, D.</searchLink><br /><searchLink fieldCode="AU" term="%22Regolini%2C+J%2E+L%2E%22">Regolini, J. L.</searchLink><br /><searchLink fieldCode="AU" term="%22Dutartre%2C+D%2E%22">Dutartre, D.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; January 1 1991, Vol. 69, p358-361, 4p
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        Value: 10.1063/1.347721
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 358
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      – TitleFull: Electrical characterization of silicon epitaxial layers grown by limited reaction processing.
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            NameFull: Mathiot, D.
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            NameFull: Regolini, J. L.
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              Text: January 1 1991
              Type: published
              Y: 1991
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              Value: 69
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