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Diffusion of boron in silicon during post-implantation annealing.

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Title: Diffusion of boron in silicon during post-implantation annealing.
Authors: Solmi, S., Baruffaldi, F.
Source: Journal of Applied Physics; February 15 1991, Vol. 69, p2135-2142, 8p
Database: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Diffusion of boron in silicon during post-implantation annealing.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; February 15 1991, Vol. 69, p2135-2142, 8p
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        Value: 10.1063/1.348740
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 2135
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      – TitleFull: Diffusion of boron in silicon during post-implantation annealing.
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            NameFull: Solmi, S.
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            NameFull: Baruffaldi, F.
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              Text: February 15 1991
              Type: published
              Y: 1991
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              Value: 69
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