APA (7th ed.) Citation

Ahrenkiel, R. K., Keyes, B. M., & Shen, T. C. (1991). Minority-carrier lifetime in AlxGa1-xAs grown by molecular-beam epitaxy. Journal of Applied Physics, 69, 3094. https://doi.org/10.1063/1.348573

Chicago Style (17th ed.) Citation

Ahrenkiel, R. K., B. M. Keyes, and T. C. Shen. "Minority-carrier Lifetime in AlxGa1-xAs Grown by Molecular-beam Epitaxy." Journal of Applied Physics 69 (1991): 3094. https://doi.org/10.1063/1.348573.

MLA (9th ed.) Citation

Ahrenkiel, R. K., et al. "Minority-carrier Lifetime in AlxGa1-xAs Grown by Molecular-beam Epitaxy." Journal of Applied Physics, vol. 69, 1991, p. 3094, https://doi.org/10.1063/1.348573.