Minority-carrier lifetime in AlxGa1-xAs grown by molecular-beam epitaxy.

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Bibliographic Details
Title: Minority-carrier lifetime in AlxGa1-xAs grown by molecular-beam epitaxy.
Authors: Ahrenkiel, R. K., Keyes, B. M., Shen, T. C.
Source: Journal of Applied Physics; March 1 1991, Vol. 69, p3094-3096, 3p
Database: Applied Science & Technology Source
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