APA (7th ed.) Citation

Ahrenkiel, R. K., Keyes, B. M., & Dunlavy, D. J. (1991). Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers. Journal of Applied Physics, 70, 225. https://doi.org/10.1063/1.350315

Chicago Style (17th ed.) Citation

Ahrenkiel, R. K., B. M. Keyes, and D. J. Dunlavy. "Intensity-dependent Minority-carrier Lifetime in III-V Semiconductors Due to Saturation of Recombination Centers." Journal of Applied Physics 70 (1991): 225. https://doi.org/10.1063/1.350315.

MLA (9th ed.) Citation

Ahrenkiel, R. K., et al. "Intensity-dependent Minority-carrier Lifetime in III-V Semiconductors Due to Saturation of Recombination Centers." Journal of Applied Physics, vol. 70, 1991, p. 225, https://doi.org/10.1063/1.350315.