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Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers.

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Title: Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers.
Authors: Ahrenkiel, R. K., Keyes, B. M., Dunlavy, D. J.
Source: Journal of Applied Physics; July 1 1991, Vol. 70, p225-231, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501894742
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; July 1 1991, Vol. 70, p225-231, 7p
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      – Type: doi
        Value: 10.1063/1.350315
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 225
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      – TitleFull: Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers.
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            NameFull: Ahrenkiel, R. K.
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            NameFull: Keyes, B. M.
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            NameFull: Dunlavy, D. J.
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              Text: July 1 1991
              Type: published
              Y: 1991
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              Value: 70
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            – TitleFull: Journal of Applied Physics
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