Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers.
Saved in:
| Title: | Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers. |
|---|---|
| Authors: | Ahrenkiel, R. K., Keyes, B. M., Dunlavy, D. J. |
| Source: | Journal of Applied Physics; July 1 1991, Vol. 70, p225-231, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
|---|---|
| DOI: | 10.1063/1.350315 |
