APA (7th ed.) Citation

Jönsson, J., Paulsson, G., & Samuelson, L. (1991). Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs. Journal of Applied Physics, 70, 1737. https://doi.org/10.1063/1.349513

Chicago Style (17th ed.) Citation

Jönsson, J., G. Paulsson, and L. Samuelson. "Reflectance Difference for in Situ Control of Surface V/III Ratio During Epitaxial Growth of GaAs." Journal of Applied Physics 70 (1991): 1737. https://doi.org/10.1063/1.349513.

MLA (9th ed.) Citation

Jönsson, J., et al. "Reflectance Difference for in Situ Control of Surface V/III Ratio During Epitaxial Growth of GaAs." Journal of Applied Physics, vol. 70, 1991, p. 1737, https://doi.org/10.1063/1.349513.