Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs.
Saved in:
| Title: | Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs. |
|---|---|
| Authors: | Jönsson, J., Paulsson, G., Samuelson, L. |
| Source: | Journal of Applied Physics; August 1 1991, Vol. 70, p1737-1741, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
|---|---|
| DOI: | 10.1063/1.349513 |
