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Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs.

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Title: Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs.
Authors: Jönsson, J., Paulsson, G., Samuelson, L.
Source: Journal of Applied Physics; August 1 1991, Vol. 70, p1737-1741, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501906148
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501906148
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      – Type: doi
        Value: 10.1063/1.349513
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 1737
    Titles:
      – TitleFull: Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs.
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            NameFull: Jönsson, J.
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            NameFull: Paulsson, G.
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            NameFull: Samuelson, L.
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            – D: 01
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              Text: August 1 1991
              Type: published
              Y: 1991
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              Value: 70
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