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Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs.

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Bibliographic Details
Title: Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs.
Authors: Jönsson, J., Paulsson, G., Samuelson, L.
Source: Journal of Applied Physics; August 1 1991, Vol. 70, p1737-1741, 5p
Database: Applied Science & Technology Source
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