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Frequency dependence of transconductance on deep traps in GaAs metal semiconductor field-effect transistors.

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Title: Frequency dependence of transconductance on deep traps in GaAs metal semiconductor field-effect transistors.
Authors: Zhao, Jian H., Tang, Pin F., Hwang, Robert
Source: Journal of Applied Physics; August 1 1991, Vol. 70, p1899-1901, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501906316
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Frequency dependence of transconductance on deep traps in GaAs metal semiconductor field-effect transistors.
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  Data: <searchLink fieldCode="AU" term="%22Zhao%2C+Jian+H%2E%22">Zhao, Jian H.</searchLink><br /><searchLink fieldCode="AU" term="%22Tang%2C+Pin+F%2E%22">Tang, Pin F.</searchLink><br /><searchLink fieldCode="AU" term="%22Hwang%2C+Robert%22">Hwang, Robert</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; August 1 1991, Vol. 70, p1899-1901, 3p
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/1.349470
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 3
        StartPage: 1899
    Titles:
      – TitleFull: Frequency dependence of transconductance on deep traps in GaAs metal semiconductor field-effect transistors.
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          Name:
            NameFull: Zhao, Jian H.
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          Name:
            NameFull: Tang, Pin F.
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            NameFull: Hwang, Robert
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            – D: 01
              M: 08
              Text: August 1 1991
              Type: published
              Y: 1991
          Identifiers:
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              Value: 00218979
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              Value: 70
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            – TitleFull: Journal of Applied Physics
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