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Effect of mobility gradient in inhomogeneously doped semiconductors.

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Bibliographic Details
Title: Effect of mobility gradient in inhomogeneously doped semiconductors.
Authors: Ho, B. L., Cho, C. C.
Source: Journal of Applied Physics; June 1968, Vol. 39, p3333-3336, 4p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 516616983
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Effect of mobility gradient in inhomogeneously doped semiconductors.
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  Data: <searchLink fieldCode="AU" term="%22Ho%2C+B%2E+L%2E%22">Ho, B. L.</searchLink><br /><searchLink fieldCode="AU" term="%22Cho%2C+C%2E+C%2E%22">Cho, C. C.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; June 1968, Vol. 39, p3333-3336, 4p
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1656778
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 3333
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      – TitleFull: Effect of mobility gradient in inhomogeneously doped semiconductors.
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            NameFull: Ho, B. L.
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            NameFull: Cho, C. C.
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          Dates:
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              M: 06
              Text: June 1968
              Type: published
              Y: 1968
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              Value: 00218979
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              Value: 39
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            – TitleFull: Journal of Applied Physics
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