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Method for calculating band profile and capacitance of nonuniformly doped Schottky barriers.

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Title: Method for calculating band profile and capacitance of nonuniformly doped Schottky barriers.
Authors: Lubberts, G., Burkey, B. C.
Source: Solid-State Electronics; September 1975, Vol. 18, p805-809, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 516761095
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Method for calculating band profile and capacitance of nonuniformly doped Schottky barriers.
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  Data: <searchLink fieldCode="AU" term="%22Lubberts%2C+G%2E%22">Lubberts, G.</searchLink><br /><searchLink fieldCode="AU" term="%22Burkey%2C+B%2E+C%2E%22">Burkey, B. C.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; September 1975, Vol. 18, p805-809, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=516761095
RecordInfo BibRecord:
  BibEntity:
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 805
    Titles:
      – TitleFull: Method for calculating band profile and capacitance of nonuniformly doped Schottky barriers.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Lubberts, G.
      – PersonEntity:
          Name:
            NameFull: Burkey, B. C.
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          Dates:
            – D: 01
              M: 09
              Text: September 1975
              Type: published
              Y: 1975
          Identifiers:
            – Type: issn-print
              Value: 00381101
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            – Type: volume
              Value: 18
          Titles:
            – TitleFull: Solid-State Electronics
              Type: main
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