Mathiot, D., & Pfister, J. C. (1982). Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon. Journal of Applied Physics, 53, 3053. https://doi.org/10.1063/1.331049
Chicago Style (17th ed.) CitationMathiot, D., and J. C. Pfister. "Influence of the Nonequilibrium Vacancies on the Diffusion of Phosphorus into Silicon." Journal of Applied Physics 53 (1982): 3053. https://doi.org/10.1063/1.331049.
MLA (9th ed.) CitationMathiot, D., and J. C. Pfister. "Influence of the Nonequilibrium Vacancies on the Diffusion of Phosphorus into Silicon." Journal of Applied Physics, vol. 53, 1982, p. 3053, https://doi.org/10.1063/1.331049.
Warning: These citations may not always be 100% accurate.