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Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon.

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Bibliographic Details
Title: Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon.
Authors: Mathiot, D., Pfister, J. C.
Source: Journal of Applied Physics; April 1982, Vol. 53, p3053-3058, 6p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon.
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      – Type: doi
        Value: 10.1063/1.331049
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 3053
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      – TitleFull: Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon.
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            NameFull: Mathiot, D.
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            NameFull: Pfister, J. C.
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              Text: April 1982
              Type: published
              Y: 1982
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              Value: 53
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