Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon.
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| Title: | Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon. |
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| Authors: | Mathiot, D., Pfister, J. C. |
| Source: | Journal of Applied Physics; April 1982, Vol. 53, p3053-3058, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.331049 |
