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Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon.

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Bibliographic Details
Title: Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon.
Authors: Mathiot, D., Pfister, J. C.
Source: Journal of Applied Physics; April 1982, Vol. 53, p3053-3058, 6p
Database: Applied Science & Technology Source
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