APA (7th ed.) Citation

Sridharan, S., Christensen, A., & Venkatachalam, A. (2011). Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN. IEEE Electron Device Letters, 32(11), 1522. https://doi.org/10.1109/LED.2011.2164611

Chicago Style (17th ed.) Citation

Sridharan, Sriraaman, Adam Christensen, and Anusha Venkatachalam. "Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN." IEEE Electron Device Letters 32, no. 11 (2011): 1522. https://doi.org/10.1109/LED.2011.2164611.

MLA (9th ed.) Citation

Sridharan, Sriraaman, et al. "Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN." IEEE Electron Device Letters, vol. 32, no. 11, 2011, p. 1522, https://doi.org/10.1109/LED.2011.2164611.