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Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN.

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Bibliographic Details
Title: Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN.
Authors: Sridharan, Sriraaman, Christensen, Adam, Venkatachalam, Anusha
Source: IEEE Electron Device Letters; November 2011, Vol. 32 Issue 11, p1522-1524, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 527622502
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN.
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  Data: <searchLink fieldCode="AU" term="%22Sridharan%2C+Sriraaman%22">Sridharan, Sriraaman</searchLink><br /><searchLink fieldCode="AU" term="%22Christensen%2C+Adam%22">Christensen, Adam</searchLink><br /><searchLink fieldCode="AU" term="%22Venkatachalam%2C+Anusha%22">Venkatachalam, Anusha</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; November 2011, Vol. 32 Issue 11, p1522-1524, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=527622502
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1109/LED.2011.2164611
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 1522
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      – TitleFull: Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN.
        Type: main
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            NameFull: Sridharan, Sriraaman
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            NameFull: Christensen, Adam
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            NameFull: Venkatachalam, Anusha
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            – D: 01
              M: 11
              Text: November 2011
              Type: published
              Y: 2011
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              Value: 32
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