View in EDS

Charge retention phenomena in CT silicon nitride: Impact of technology and operating conditions.

Saved in:
Bibliographic Details
Title: Charge retention phenomena in CT silicon nitride: Impact of technology and operating conditions.
Authors: Ghidini, G.1, Galbiati, N.1, Mascellino, E.2, Scozzari, C.1, Sebastiani, A.1, Amoroso, S.2, Compagnoni, C. Monzio2, Spinelli, A. S.2, Maconi, A.2, Piagge, R.1, Del Vitto, A.1, Alessandri, M.1, Baldi, I.1, Moltrasio, E.1, Albini, G.1, Grossi, A.1, Tessariol, P.1, Camerlenghi, E.1, Mauri, A.1
Source: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan2011, Vol. 29 Issue 1, p01AE01, 4p
Database: Applied Science & Technology Source
Description
ISSN:21662746
DOI:10.1116/1.3532541