APA (7th ed.) Citation

Labrie, D., Lafontaine, H., Rowell, N., Charbonneau, S., Houghton, D., Goldberg, R. D., & Mitchell, I. V. (1996). Quantum-well intermixing in Si1-xGex/Si strained-layer heterostructures using ion implantation. Applied Physics Letters, 69(7), 993. https://doi.org/10.1063/1.117106

Chicago Style (17th ed.) Citation

Labrie, D., H. Lafontaine, N. Rowell, S. Charbonneau, D. Houghton, R. D. Goldberg, and I. V. Mitchell. "Quantum-well Intermixing in Si1-xGex/Si Strained-layer Heterostructures Using Ion Implantation." Applied Physics Letters 69, no. 7 (1996): 993. https://doi.org/10.1063/1.117106.

MLA (9th ed.) Citation

Labrie, D., et al. "Quantum-well Intermixing in Si1-xGex/Si Strained-layer Heterostructures Using Ion Implantation." Applied Physics Letters, vol. 69, no. 7, 1996, p. 993, https://doi.org/10.1063/1.117106.