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Quantum-well intermixing in Si1-xGex/Si strained-layer heterostructures using ion implantation.

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Title: Quantum-well intermixing in Si1-xGex/Si strained-layer heterostructures using ion implantation.
Authors: Labrie, D., Lafontaine, H., Rowell, N., Charbonneau, S., Houghton, D., Goldberg, R. D., Mitchell, I. V.
Source: Applied Physics Letters; 8/12/1996, Vol. 69 Issue 7, p993, 3p, 3 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Quantum-well intermixing in Si1-xGex/Si strained-layer heterostructures using ion implantation.
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  Data: <searchLink fieldCode="AU" term="%22Labrie%2C+D%2E%22">Labrie, D.</searchLink><br /><searchLink fieldCode="AU" term="%22Lafontaine%2C+H%2E%22">Lafontaine, H.</searchLink><br /><searchLink fieldCode="AU" term="%22Rowell%2C+N%2E%22">Rowell, N.</searchLink><br /><searchLink fieldCode="AU" term="%22Charbonneau%2C+S%2E%22">Charbonneau, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Houghton%2C+D%2E%22">Houghton, D.</searchLink><br /><searchLink fieldCode="AU" term="%22Goldberg%2C+R%2E+D%2E%22">Goldberg, R. D.</searchLink><br /><searchLink fieldCode="AU" term="%22Mitchell%2C+I%2E+V%2E%22">Mitchell, I. V.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 8/12/1996, Vol. 69 Issue 7, p993, 3p, 3 Graphs
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        Value: 10.1063/1.117106
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              Text: 8/12/1996
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              Y: 1996
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