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Effects of low temperature preannealing on ion-implant assisted intermixing of Si1-xGex/Si quantum wells.

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Title: Effects of low temperature preannealing on ion-implant assisted intermixing of Si1-xGex/Si quantum wells.
Authors: Labrie, D., Aers, G. C., Lafontaine, H., Williams, R. L., Charbonneau, S., Goldberg, R. D., Mitchell, I. V.
Source: Applied Physics Letters; 12/16/1996, Vol. 69 Issue 25, p3866, 3p, 3 Graphs
Database: Applied Science & Technology Source
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  Availability: 0
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DbLabel: Applied Science & Technology Source
An: 6289797
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PubType: Academic Journal
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  Data: Effects of low temperature preannealing on ion-implant assisted intermixing of Si1-xGex/Si quantum wells.
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  Data: <searchLink fieldCode="AU" term="%22Labrie%2C+D%2E%22">Labrie, D.</searchLink><br /><searchLink fieldCode="AU" term="%22Aers%2C+G%2E+C%2E%22">Aers, G. C.</searchLink><br /><searchLink fieldCode="AU" term="%22Lafontaine%2C+H%2E%22">Lafontaine, H.</searchLink><br /><searchLink fieldCode="AU" term="%22Williams%2C+R%2E+L%2E%22">Williams, R. L.</searchLink><br /><searchLink fieldCode="AU" term="%22Charbonneau%2C+S%2E%22">Charbonneau, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Goldberg%2C+R%2E+D%2E%22">Goldberg, R. D.</searchLink><br /><searchLink fieldCode="AU" term="%22Mitchell%2C+I%2E+V%2E%22">Mitchell, I. V.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 12/16/1996, Vol. 69 Issue 25, p3866, 3p, 3 Graphs
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        Value: 10.1063/1.117131
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      – TitleFull: Effects of low temperature preannealing on ion-implant assisted intermixing of Si1-xGex/Si quantum wells.
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              Text: 12/16/1996
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              Y: 1996
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