Tell, B., Leheny, R. F., Liao, A. S. H., Bridges, T. J., Burkhardt, E. G., Chang, T. Y., & Beebe, E. D. (1984). Beryllium implantation doping of InGaAs. Applied Physics Letters, 44(4), 438. https://doi.org/10.1063/1.94758
Chicago Style (17th ed.) CitationTell, B., R. F. Leheny, A. S. H. Liao, T. J. Bridges, E. G. Burkhardt, T. Y. Chang, and E. D. Beebe. "Beryllium Implantation Doping of InGaAs." Applied Physics Letters 44, no. 4 (1984): 438. https://doi.org/10.1063/1.94758.
MLA (9th ed.) CitationTell, B., et al. "Beryllium Implantation Doping of InGaAs." Applied Physics Letters, vol. 44, no. 4, 1984, p. 438, https://doi.org/10.1063/1.94758.
Warning: These citations may not always be 100% accurate.