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Beryllium implantation doping of InGaAs.

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Bibliographic Details
Title: Beryllium implantation doping of InGaAs.
Authors: Tell, B.1, Leheny, R. F.1, Liao, A. S. H.1, Bridges, T. J.1, Burkhardt, E. G.1, Chang, T. Y.1, Beebe, E. D.1
Source: Applied Physics Letters; 1984, Vol. 44 Issue 4, p438-440, 3p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 71380071
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Beryllium implantation doping of InGaAs.
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      – Type: doi
        Value: 10.1063/1.94758
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 438
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      – TitleFull: Beryllium implantation doping of InGaAs.
        Type: main
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            NameFull: Tell, B.
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            NameFull: Leheny, R. F.
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            NameFull: Liao, A. S. H.
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            NameFull: Bridges, T. J.
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            NameFull: Burkhardt, E. G.
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            NameFull: Chang, T. Y.
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              Text: 1984
              Type: published
              Y: 1984
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              Value: 44
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            – TitleFull: Applied Physics Letters
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