APA (7th ed.) Citation

Fu, C., Chang-Liao, K., Liu, L., Hsieh, H., Lu, C., Li, C., . . . Heh, D. (2012). Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel. IEEE Electron Device Letters, 33(2), 188. https://doi.org/10.1109/LED.2011.2177490

Chicago Style (17th ed.) Citation

Fu, Chung-Hao, Kuei-Shu Chang-Liao, Li-Jung Liu, Hsiao-Chi Hsieh, Chun-Chang Lu, Chen-Chien Li, Tien-Ko Wang, and Da-Wei Heh. "Enhanced Hole Mobility and Low Tinv for PMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel." IEEE Electron Device Letters 33, no. 2 (2012): 188. https://doi.org/10.1109/LED.2011.2177490.

MLA (9th ed.) Citation

Fu, Chung-Hao, et al. "Enhanced Hole Mobility and Low Tinv for PMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel." IEEE Electron Device Letters, vol. 33, no. 2, 2012, p. 188, https://doi.org/10.1109/LED.2011.2177490.