Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel.
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| Title: | Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel. |
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| Authors: | Fu, Chung-Hao1, Chang-Liao, Kuei-Shu1, Liu, Li-Jung1, Hsieh, Hsiao-Chi1, Lu, Chun-Chang1, Li, Chen-Chien1, Wang, Tien-Ko1, Heh, Da-Wei2 |
| Source: | IEEE Electron Device Letters; Feb2012, Vol. 33 Issue 2, p188-190, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 07413106 |
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| DOI: | 10.1109/LED.2011.2177490 |
