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Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel.

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Title: Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel.
Authors: Fu, Chung-Hao1, Chang-Liao, Kuei-Shu1, Liu, Li-Jung1, Hsieh, Hsiao-Chi1, Lu, Chun-Chang1, Li, Chen-Chien1, Wang, Tien-Ko1, Heh, Da-Wei2
Source: IEEE Electron Device Letters; Feb2012, Vol. 33 Issue 2, p188-190, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 71537643
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel.
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; Feb2012, Vol. 33 Issue 2, p188-190, 3p
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      – Type: doi
        Value: 10.1109/LED.2011.2177490
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 188
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      – TitleFull: Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel.
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            NameFull: Fu, Chung-Hao
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            NameFull: Chang-Liao, Kuei-Shu
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            NameFull: Liu, Li-Jung
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            NameFull: Hsieh, Hsiao-Chi
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            NameFull: Lu, Chun-Chang
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            NameFull: Li, Chen-Chien
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            NameFull: Heh, Da-Wei
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              Text: Feb2012
              Type: published
              Y: 2012
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            – TitleFull: IEEE Electron Device Letters
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