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ZnO-based one diode-one resistor device structure for crossbar memory applications.

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Bibliographic Details
Title: ZnO-based one diode-one resistor device structure for crossbar memory applications.
Authors: Liu, Zi-Jheng1, Gan, Jon-Yiew1, Yew, Tri-Rung1
Source: Applied Physics Letters; 4/9/2012, Vol. 100 Issue 15, p153503-153503-4, 1p, 1 Diagram, 1 Chart, 3 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 74278827
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 4/9/2012, Vol. 100 Issue 15, p153503-153503-4, 1p, 1 Diagram, 1 Chart, 3 Graphs
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.3701722
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      – Code: eng
        Text: English
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      – TitleFull: ZnO-based one diode-one resistor device structure for crossbar memory applications.
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            NameFull: Liu, Zi-Jheng
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            NameFull: Gan, Jon-Yiew
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            NameFull: Yew, Tri-Rung
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            – D: 09
              M: 04
              Text: 4/9/2012
              Type: published
              Y: 2012
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