APA (7th ed.) Citation

Lee, W., Lin, J., Lee, C., Cheng, H., & Yew, T. (2002). Effects of CH4/SiH4 flow ratio and microwave power on the growth of β-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 °C. Thin Solid Films, 405(1/2), 17. https://doi.org/10.1016/S0040-6090(01)01723-0

Chicago Style (17th ed.) Citation

Lee, Wen-Horng, Jing-Cheng Lin, Chiapyng Lee, Huang-Chung Cheng, and Tri-Rung Yew. "Effects of CH4/SiH4 Flow Ratio and Microwave Power on the Growth of β-SiC on Si by ECR-CVD Using CH4/SiH4/Ar at 200 °C." Thin Solid Films 405, no. 1/2 (2002): 17. https://doi.org/10.1016/S0040-6090(01)01723-0.

MLA (9th ed.) Citation

Lee, Wen-Horng, et al. "Effects of CH4/SiH4 Flow Ratio and Microwave Power on the Growth of β-SiC on Si by ECR-CVD Using CH4/SiH4/Ar at 200 °C." Thin Solid Films, vol. 405, no. 1/2, 2002, p. 17, https://doi.org/10.1016/S0040-6090(01)01723-0.