Effects of CH4/SiH4 flow ratio and microwave power on the growth of β-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 °C - Lee, Wen-Horng; Lin, Jing-Cheng; Lee, Chiapyng; Cheng, Huang-Chung; Yew, Tri-Rung (Thin Solid Films, 2002)