APA (7th ed.) Citation

Yasuda, K., Niraula, M., Fujimura, N., Tachi, T., Inuzuka, H., Namba, S., . . . Agata, Y. (2012). Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate. Journal of Electronic Materials, 41(10), 2754. https://doi.org/10.1007/s11664-012-2121-7

Chicago Style (17th ed.) Citation

Yasuda, K., M. Niraula, N. Fujimura, T. Tachi, H. Inuzuka, S. Namba, S. Muramatsu, T. Kondo, and Y. Agata. "Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate." Journal of Electronic Materials 41, no. 10 (2012): 2754. https://doi.org/10.1007/s11664-012-2121-7.

MLA (9th ed.) Citation

Yasuda, K., et al. "Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate." Journal of Electronic Materials, vol. 41, no. 10, 2012, p. 2754, https://doi.org/10.1007/s11664-012-2121-7.