Hydrogen passivation of polycrystalline silicon thin films.
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| Title: | Hydrogen passivation of polycrystalline silicon thin films. |
|---|---|
| Authors: | Scheller, L.-P.1, Weizman, M.1, Simon, P.1, Fehr, M.1, Nickel, N. H.1 |
| Source: | Journal of Applied Physics; Sep2012, Vol. 112 Issue 6, p063711, 8p, 1 Chart, 7 Graphs |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 82069326 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=82069326 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.4752268 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 063711 Titles: – TitleFull: Hydrogen passivation of polycrystalline silicon thin films. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Scheller, L.-P. – PersonEntity: Name: NameFull: Weizman, M. – PersonEntity: Name: NameFull: Simon, P. – PersonEntity: Name: NameFull: Fehr, M. – PersonEntity: Name: NameFull: Nickel, N. H. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 09 Text: Sep2012 Type: published Y: 2012 Identifiers: – Type: issn-print Value: 00218979 Numbering: – Type: volume Value: 112 – Type: issue Value: 6 Titles: – TitleFull: Journal of Applied Physics Type: main |
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