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Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering.

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Title: Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering.
Authors: Grassi, R.1, Gnudi, A.1, Imperiale, I.1, Gnani, E.1, Reggiani, S.1, Baccarani, G.1
Source: Journal of Applied Physics; Apr2013, Vol. 113 Issue 14, p144506, 9p, 1 Diagram, 11 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 86966557
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; Apr2013, Vol. 113 Issue 14, p144506, 9p, 1 Diagram, 11 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=86966557
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.4800900
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      – Code: eng
        Text: English
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        PageCount: 9
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      – TitleFull: Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering.
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            NameFull: Grassi, R.
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            NameFull: Gnudi, A.
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            NameFull: Imperiale, I.
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            NameFull: Gnani, E.
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            NameFull: Reggiani, S.
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            – D: 14
              M: 04
              Text: Apr2013
              Type: published
              Y: 2013
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              Value: 113
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