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Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition.

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Title: Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition.
Authors: Ma, Alex M.1, Gupta, Manisha1, Afshar, Amir2, Shoute, Gem1, Tsui, Ying Y.1, Cadien, Kenneth C.2, Barlage, Douglas W.1
Source: Applied Physics Letters; 12/16/2013, Vol. 103 Issue 25, p253503, 5p, 1 Diagram, 4 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 93303175
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 12/16/2013, Vol. 103 Issue 25, p253503, 5p, 1 Diagram, 4 Graphs
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        Value: 10.1063/1.4836955
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        Text: English
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            NameFull: Ma, Alex M.
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              Text: 12/16/2013
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